(Hong Kong)
Product Summary
The B772 is a PNP Epitaxial Silicon Transistor.
Parametrics
B772 absolute maximum ratings: (1)Collector-Base Voltage: - 40 V; (2)Collector-Emitter Voltage: - 30 V; (3)Emitter-Base Voltage: - 5 V; (4)Collector Current (DC): - 3 A; (5)Collector Current (Pulse): - 7 A; (6)Base Current (DC): - 0.6 A; (7)Collector Dissipation (TC=25℃): 10 W; (8)Collector Dissipation (Ta=25℃): 1 W; (9)Junction to Ambient: 132 ℃/W; (10)Junction to Case: 13.5 ℃/W; (11)Junction Temperature: 150 ℃; (12)Storage Temperature: - 55 ~ 150 ℃.
Features
B772 features: (1)Collector Cut-off Current: - 1 μA at VCB = - 30V, IE = 0 ; (2)Emitter Cut-off Current: - 1 μA at VEB = - 3V, IC = 0 ; (3)DC Current Gain: 30 min at VCE = - 2V, IC = - 20mA, 60 min at VCE = - 2V, IC = - 1A; (4)Collector-Emitter Saturation Voltage: -0.3 V at IC = - 2A, IB = - 0.2A; (5)Base-Emitter Saturation Voltage: - 2.0 V at IC = - 2A, IB = - 0.2A; (6)Current Gain Bandwidth Product: 80 MHz at VCE = - 5V, IE = - 0.1A; (7)Output Capacitance: 55 pF at VCB = - 10V, IE = 0, f = 1MHz.
Diagrams
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 B772 |
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Data Sheet |
Negotiable |
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B7728 |
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Data Sheet |
Negotiable |
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