(Hong Kong)
Product Summary
This Power MOSFET STP75NF75 realized with STMicroelectronics unique STripFET. process has specifically been designed to minimize input capacitance and gate charge. STP75NF75 is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. STP75NF75 is also intended for any applications with low gate drive requirements.
Parametrics
STP75NF75 absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0) 75 V; (2)VDGR Drain-gate voltage (RGS = 20KΩ) 75 V; (3)VGS Gate-source voltage ± 20 V; (4)ID Drain current (continuous) at TC = 25℃ 80A; (5)ID Drain current (continuous) at TC=100℃ 70A; (6)IDM Drain current (pulsed) 320A; (7)dv/dt Peak diode recovery voltage slope 12 V/ns; (8)EAS Single pulse avalanche energy 700 mJ.
Features
STP75NF75 features: (1)Exceptional dv/dt capability; (2)100% avalanche tested; (3)Switching application.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 STP75NF75 |
STMicroelectronics |
MOSFET N-Ch 75 Volt 80 Amp |
Data Sheet |
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STP75NF75FP |
STMicroelectronics |
MOSFET N-Ch, 75V-0.0095ohms 80A |
Data Sheet |
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STP75NF75L |
STMicroelectronics |
MOSFET N-Ch 75 Volt 75 Amp |
Data Sheet |
Negotiable |
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STP75NF75-M |
Other |
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Data Sheet |
Negotiable |
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