(Hong Kong)
Product Summary
The IRF630 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRF630 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 9.0 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 5.7 A; (3)pulse drain current: 36 A; (4)power dissipation: 74 W; (5)linear derating factor: 0.59 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 7.4 mJ; (8)peak diode recovery dv/dt: 5.0 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.
Features
IRF630 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF630_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
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IRF630F |
Other |
|
Data Sheet |
Negotiable |
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IRF630M |
Other |
|
Data Sheet |
Negotiable |
|
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 |
IRF630N |
International Rectifier |
MOSFET N-CH 200V 9.3A TO-220AB |
Data Sheet |
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IRF630N_R4942 |
Fairchild Semiconductor |
MOSFET TO-247 |
Data Sheet |
Negotiable |
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IRF630NL |
|
MOSFET N-CH 200V 9.3A TO-262 |
Data Sheet |
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 |
IRF630SPBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 9.0 Amp |
Data Sheet |
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IRF630PBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 9.0 Amp |
Data Sheet |
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